Ali Gokirmak
Professor/Electrical and Computer Engr
Storrs Mansfield
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Scholarly Contributions
330 Scholarly Contributions
Characterization of Seebeck Coefficient, Electrical Resistivity and Average Grain Size of Ge2Sb2Te5 Thin Films at High Temperatures
Research Type: Conference Proceedings
Impact of High Electric Field on Resistance Drift in Amorphous Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures
Research Type: Conference Proceedings
Computational Analysis of Complex Amorphization/Crystallization Dynamics in Large Phase Change Memory Devices
Research Type: Conference Proceedings
Metastable Electrical Resistivity of Amorphous Ge2Sb2Te5 at Elevated Temperatures Mat
Research Type: Conference Proceedings
Simulations of Reset Operation of Phase Change Memory Devices Based on Semiconductor Physics including the Generation-Transport-Recombination (GTR) of Minority Carriers
Research Type: Conference Proceedings
Thermoelectric Effects in Phase Change Memory Cells—A Computational Analysis on Double Mushroom Cells
Research Type: Conference Proceedings
Resistance Drift in Suspended and On-Oxide Gb2Se2Te5 Phase Change Memory Line Cells
Research Type: Conference Proceedings
Dimensionality - Balancing Accuracy and Complexity in Finite Element Simulations of Phase Change Memory and Ovonic Switching Devices
Research Type: Conference Proceedings
Finite Element Modeling of Resistance Drift in Phase Change Memory Devices
Research Type: Conference Proceedings
Electro-Thermal Effects and Crystallization-Amorphization Dynamics
Research Type: Conference Proceedings
Comparison of Instantaneous Crystallization and Metastable Models in Phase Change Memory Cells
Research Type: Conference Proceedings
Electrical Characterization of Ge 2 Sb 2 Te 5 Phase Change Memory Cells at Cryogenic Temperatures to Investigate the Physical Phenomena that Give Rise to Resistance Drift of the Amorphous Phase
Research Type: Conference Proceedings
Modeling Charge and Electro-thermal Heat Transport in Phase Change Memory Cells
Research Type: Conference Proceedings
Electrical Resistivity of Liquid Ge2Sb2Te5 Based on Thin Film and Nanoscale Device Measurements Mat
Research Type: Conference Proceedings
Crystallization times of Ge2Sb2Te5 nanostructures as a function of temperature
Research Type: Conference Proceedings
An Electrothermal Analysis of Magnetic Tunnel Junction MRAM Devices
Research Type: Conference Proceedings