John A. Chandy
Professor & Department Head/Electrical and Computer Engr
Storrs Mansfield
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Scholarly Contributions
212 Scholarly Contributions
Spatial Wavefunction Switched SWS FieldEffect Transistors Computing Using More Than Few Electrons
2010
Research Type: Journal Article
Spatial Wavefunction Switched (SWS) InGaAs FETs with II-VI Gate Insulators
2011
Research Type: Journal Article
Spatial Wavefunction Switched (SWS) FET SRAM Circuits and Simulation
2017
Research Type: Journal Article
Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling
2019
Research Type: Journal Article
Simulation and Comparative Study of Propagation Delay in Multi-Channel Quantum SWS-CMOS-Based Inverters Using II-VI Gate Insulator
2024
Research Type: Journal Article
https://dx.doi.org/10.1142/S0129156424400585
Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic
2015
Research Type: Journal Article
SMART: security model adversarial risk-based tool for systems security design evaluation
2020
Research Type: Journal Article
International
SI/GE Quantum Dot Channel FETs for Multi-Bit Computing
2024
Research Type: Journal Article
https://dx.doi.org/10.1142/S0129156424400767
Robust Hardware True Random Number Generators using DRAM Remanence Effects
2016
Research Type: Conference Proceedings
Random access memory cells using spatial wavefunction switched field-effect transistors
2015
Research Type: Patent and Intellectual Property
RAID0.5 Active data replication for low cost disk array data protection
2006
Research Type: Conference Proceedings
RAID0 5 design and implementation of a low cost disk array data protection method
2008
Research Type: Journal Article
Quaternary Logic and Applications using Multiple Quantum Well Based SWSFETs
2012
Research Type: Journal Article
Quantum dot channel fets harnessing mini-energy band transitions in geox-ge and si qdsl for multi-bit computing
2022
Research Type: Book Chapter
https://dx.doi.org/10.1142/9789811270796_0012
Quantum dot channel (QDC) field-effect transistors (FETs) using II-VI barrier layers
2012
Research Type: Conference Proceedings
https://dx.doi.org/10.1007/s11664-012-2161-z
Quantum Dot floating gate nonvolatile random access memory using Ge Quantum Dot channel for faster erasing
2018
Research Type: Book Chapter